High temperature processing includes a diversity of processes where high temperatures are used. Hence, annealing may be necessary to activate dopants after ion implantation or to alloy contacts after metal deposition, while treatment in a chemically active atmosphere is used to change the surface layer, e.g., by diffusion of dopants and thermal oxidation of a Si surface. Typical use is alloying of metall contacts or sealing frames with respect to packaging of devices or wafers (wafer level packaging). The furnace can be placed in multi positions: vertically, horizontally or at an angle to f.eks. grow crystals or other materials.  Rotate vertically for sintering applications. Gases that can be connected are O₂, N_{2 C2H2, CO2} and H₂ and forming gas.

C2 & H2 are controlled by MFC's - can be set on the MFC or via computer.

Annealing in vacuum is also possible (optional).

OBS: the glass tube is only 2" !

Possible processes:

Diffusion and activation

• Alloying
• Growing

Technical Data: Handles 1" wafers and  small pieces. Max peak Temp. 1100ºC (<1h). Max. continuous temp. 1000ºC. Max heating rate 20ºC/min.