High temperature processing includes a diversity of processes where high temperatures are used. Hence, annealing may be necessary to activate dopants after ion implantation or to alloy contacts after metal deposition, while treatment in a chemically active atmosphere is used to change the surface layer, e.g., by diffusion of dopants and thermal oxidation of a Si surface. Typical use is wet or dry oxidation of 100 or 150mm Si wafers. Gases connected are O2, N2 and H2.
1) Wet and dry oxidation
2) Diffusion and activation of dopants
3) Contact alloying
Technical Data: Handles 100 and 150mm wafers. Max Temp. 1200ºC. Temp.uniformity +/-2ºC for T≥750ºC